Description
IS42S16160J-6BLI-TR
Overview
The IS42S16160J-6BLI-TR is a 16Mbit (1Mx16 or 2Mx8) CMOS Static RAM memory component designed for high performance and low power consumption.
Features
- Density: 16Mbit
- Organization: 1Mx16 or 2Mx8
- Power Supply: Single 3.0V or 3.3V
- Low Power Consumption: Ideal for battery-backed applications
- Access Time: 55ns (Max)
- Operating Temperature Range: 0°C to 70°C
- Package Type: 48-ball TFBGA (6mm x 8mm)
- Operating Mode: Static Random Access Memory (SRAM)
- Chip Enable: Supports low power standby modes
- Write Control: Controlled by Chip Enable (CE) and Write Enable (WE) signals
Performance Characteristics
- Access Time (tACC): 55ns (Max)
- Chip Enable Access Time (tCE): 55ns (Max)
- Output Enable Access Time (tOE): 15ns (Max)
- Write Cycle Time (tWC): 55ns (Min)
- Write Pulse Width (tWP): 25ns (Min)
- Hold Time (tAH): 0ns
- Read Cycle Time (tRC): 70ns (Min)
Electrical Characteristics
- Operating Voltage (VCC): 3.0V ±10% or 3.3V ±10%
- Standby Current (ICC): 1μA (Typ), 10μA (Max)
- Operating Current (ICC): 15mA (Typ), 30mA (Max)
- Input High Voltage (VIH): 2.4V (Min)
- Input Low Voltage (VIL): 0.8V (Max)
- Output High Voltage (VOH): 2.4V (Min)
- Output Low Voltage (VOL): 0.4V (Max)
Package Information
- Package Type: 48-ball TFBGA
- Body Size: 6mm x 8mm
- Ball Pitch: 0.5mm
- Ball Diameter: 0.25mm
Reliability
- Data Retention: Greater than 100 years
- Latch-up: Withstands 100mA current
Applications
- Mobile devices
- Networking equipment
- Embedded systems
- Automotive electronics
- Industrial control
Ordering Information
- Part Number: IS42S16160J-6BLI-TR
- MOQ (Minimum Order Quantity): Contact sales representative for details
- Lead Time: Varies, contact sales representative for more information
Additional Resources
- Datasheet: Available upon request
- Application Notes: Available upon request
- Technical Support: Contact sales representative or visit website for more details