Description
IPW65R018CFD7
Description
The IPW65R018CFD7 is a high-performance IGBT module designed for high-power applications. This module features a collector-emitter voltage of 650V and a collector current of 180A.
Key Features
- High Current Capability: 180A collector current for high-power applications
- High Voltage Capability: 650V collector-emitter voltage for reliable operation
- Low Switching Losses: Optimized for low energy losses during switching
- Compact Package: FFD7 package for high power density and reduced size
Electrical Characteristics
- Collector-Emitter Voltage (Vce): 650V
- Collector Current (Ic): 180A
- Gate-Emitter Voltage (Vge): 15V
- Threshold Voltage (Vth): 6.5V
- Internal Gate Resistance (Rg): 10ohm
- Switching Frequency: up to 20kHz
Thermal Characteristics
- Junction Temperature (Tj): -40°C to 150°C
- Case Temperature (Tc): -40°C to 100°C
- Thermal Resistance (Rth): 0.15K/W
Package and Pinout
- Package Type: FFD7
- Pinout:
- Gate: Pin 1
- Collector: Pin 2-5
- Emitter: Pin 6-7
Applications
- Motor Control: High-power motor control applications
- Power Supplies: High-voltage power supplies
- Renewable Energy: Wind and solar power systems
- Industrial Drives: High-performance industrial drives
Documentation
- Datasheet: Available for download
- Application Notes: Available for download
Ordering Information
- Part Number: IPW65R018CFD7
- Packing: Tube or Tray packing available
- Lead Time: Check with sales for lead time and availability