Description
IPSA70R900P7S
Overview
The IPSA70R900P7S is a high-performance, insulated gate bipolar transistor (IGBT) module designed for a wide range of applications, including motor drives, power supplies, and renewable energy systems.
Key Features
- High Current Rating: 450 A (DC)
- High Voltage Rating: 900 V
- Low Saturation Voltage: 1.7 V (Typ.)
- High Switching Speed: 1.0 μs (Typ.)
- Low Gate Charge: 120 nC (Typ.)
- High Thermal Conductivity: 0.55 W/K (Typ.)
Electrical Characteristics
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | Vce | – | – | – | 900 | V |
| Gate-Emitter Voltage | Vge | – | – | – | 20 | V |
| Collector Current (DC) | Ic | – | – | – | 450 | A |
| Collector Current (Pulsed) | Icp | – | – | – | 900 | A |
| Saturation Voltage | Vce(sat) | Ic = 450 A, Vge = 15 V | – | 1.7 | – | V |
| Switching Time (Turn-On) | ton | Vge = 15 V, Rg = 10 Ω | – | 1.0 | – | μs |
| Switching Time (Turn-Off) | toff | Vge = 15 V, Rg = 10 Ω | – | 1.0 | – | μs |
| Gate Charge | Qg | Vge = 15 V | – | 120 | – | nC |
Thermal Characteristics
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Thermal Resistance (Junction to Case) | Rth(j-c) | – | – | 0.055 | – | K/W |
| Thermal Resistance (Case to Heat Sink) | Rth(c-h) | – | – | 0.01 | – | K/W |
Mechanical Characteristics
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Module Weight | – | – | – | 570 | – | g |
| Module Dimensions | – | – | – | 77 x 36 x 15 | – | mm |
Applications
The IPSA70R900P7S IGBT module is suitable for a wide range of applications, including:
- Motor drives
- Power supplies
- Renewable energy systems
- Industrial automation
- Medical equipment
Ordering Information
To order the IPSA70R900P7S IGBT module, please contact our sales team or authorized distributors.