Description
IPSA70R2K0P7S
Product Overview
The IPSA70R2K0P7S is a high-performance power semiconductor device designed for a wide range of applications. This device is part of a family of products that offer exceptional reliability, efficiency, and durability.
Key Features
- Maximum Collector-Emitter Voltage (Vce): 700 V
- Maximum Gate-Emitter Voltage (Vge): ±20 V
- Maximum Collector Current (Ic): 200 A
- Maximum Power Dissipation (Pd): 420 W
- On-Resistance (Rds(on)): 0.7 mΩ
- Threshold Voltage (Vth): 4.5 V
- Input Capacitance (Ciss): 5500 pF
- Output Capacitance (Coss): 150 pF
- Reverse Transfer Capacitance (Crss): 20 pF
Package and Pin Configuration
The IPSA70R2K0P7S comes in a TO-247 package, providing excellent thermal management and durability. The pin configuration is as follows:
- Gate (G): 1
- Drain (D): 2
- Source (S): 3
Applications
The IPSA70R2K0P7S is suitable for a variety of applications, including:
- Motor Control
- Power Supplies
- Inverters
- Electric Vehicles
- Renewable Energy Systems
Mechanical Characteristics
- Weight: 20 grams
- Mounting Hole Diameter: 3.5 mm
- Mounting Hole Pitch: 5.5 mm
- Lead Material: Copper
Environmental Characteristics
- Operating Temperature (Tj): -40 to 150°C
- Storage Temperature (Tstg): -40 to 150°C
- Junction-to-Case Thermal Resistance (Rth(j-c)): 0.5 K/W
Ordering Information
To order the IPSA70R2K0P7S, please contact our sales team or authorized distributors.
Disclaimer
All specifications are subject to change without notice. It is the responsibility of the user to ensure that the device is used within the specified parameters and in accordance with all applicable laws and regulations.