Description

IPS70R360P7S

Product Overview

The IPS70R360P7S is a high-performance power semiconductor device designed for a wide range of applications. With its advanced technology and robust design, this device offers superior reliability, efficiency, and flexibility.

Key Features

• High Current Rating: 70 A
• Low On-Resistance: 360 mΩ
• High Voltage Rating: 650 V
• TO-247 Package: Industry-standard package for easy interfacing and mounting
• Pb-Free (RoHS Compliant): Environmentally friendly design

Electrical Characteristics

• Drain-Source Voltage (Vds): 650 V
• Gate-Source Voltage (Vgs): ±20 V
• On-Resistance (Rds(on)): 360 mΩ
• Drain Current (Id): 70 A
• Pulsed Drain Current (Idp): 140 A
• Threshold Voltage (Vth): 2.5 V

Package and Pinout

• Package Type: TO-247
• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source

Thermal Resistance

• Junction-to-Case (RθJC): 1.08 °C/W
• Junction-to-Ambient (RθJA): 62.5 °C/W

Applications

• Power Supplies: High-efficiency switching power supplies
• Motor Control: Industrial motor control and drives
• Renewable Energy: Solar and wind power conversion systems
• Automotive: Electric vehicles and hybrid electric vehicles

Ordering Information

• Part Number: IPS70R360P7S
• Package: TO-247

Note: All parameters and specifications are subject to change without notice. Please verify with the manufacturer for the most up-to-date information.