Description

IPP80R750P7 IGBT Module

Overview

The IPP80R750P7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for high-reliability applications. This module features a robust and compact design, making it suitable for a wide range of industrial and power electronics applications.

Key Features

• IGBT Type: TrenchStop IGBT
• Collector-Emitter Voltage (Vces): 750V
• Gate-Emitter Voltage (Vges): ±20V
• Collector Current (Ic): 80A
• Pulse Collector Current (Icp): 240A
• Switching Frequency (fsw): Up to 20kHz
• Thermal Resistance (Rth(j-c)): 0.15K/W
• Operating Junction Temperature (Tj): -40°C to 150°C
• Storage Temperature (Tstg): -40°C to 125°C

Package and Pinout

• Package Type: 42mm x 24mm x 11mm
• Pinout:
  • Pin 1:Emitter
  • Pin 2:Collector
  • Pin 3:Gate

Electrical Characteristics

• On-State Voltage (Vce(sat)): 2.2V
• Switching Losses (Eon + Eoff): 2.5mJ
• Turn-On Delay Time (ton): 0.2μs
• Turn-Off Delay Time (toff): 0.5μs
• Rise Time (tr): 0.1μs
• Fall Time (tf): 0.2μs

Mechanical Characteristics

• Weight: 30g
• Mounting: Through-hole or surface mount

Applications

• Industrial Motor Control
• Power Supplies
• Renewable Energy Systems
• Electrical Vehicles

Documentation

• Datasheet: Available upon request
• Application Notes: Available upon request