Description

Product Overview

The ipp80r1k2p7 is a high-performance power device designed to meet the demands of a wide range of applications. Key features include:

• Package Type: TO-247
• Drain-Source Voltage (Vds): 800V
• Gate-Source Voltage (Vgs): ±20V
• Drain Current (Id): 80A
• On-Resistance (Rds(on)): 1.2mΩ
• Rth(j-c): 0.42°C/W
• Rth(j-a): 62°C/W
• StoredGate Charge (Qg): 140nC
• Internal Gate Resistance (Rg): 2.5Ω
• Maximum Power Dissipation (Pd): 670W
• Maximum Junction Temperature (Tj): 175°C
• Maximum Storage Temperature (Tstg): -55 to 150°C
• Operating Temperature Range (Top): -55 to 150°C

Technical Specifications

Electrical Characteristics

• Drain-Source Breakdown Voltage (V(BR)DSS): 800V
• Zero Gate Voltage Drain Current (I(DSS)): 250μA at Vds=800V, Vgs=0V
• Gate-Source Leakage Current (I(GSS)): ±100nA at Vgs=±20V
• On-State Drain Current (Id): 80A at Vgs=10V, Vds=10V
• Static Drain-Source On-Resistance (Rds(on)):
  • At Vgs=10V, Id=40A: 1.2mΩ
  • At Vgs=10V, Id=80A: 1.4mΩ

Switching Characteristics

• Turn-On Delay Time (td(on)): 12ns at Vdd=400V, Id=40A, Vgs=10V, Rg=2.5Ω
• Rise Time (tr): 42ns at Vdd=400V, Id=40A, Vgs=10V, Rg=2.5Ω
• Turn-Off Delay Time (td(off)): 33ns at Vdd=400V, Id=40A, Vgs=10V, Rg=2.5Ω
• Fall Time (tf): 23ns at Vdd=400V, Id=40A, Vgs=10V, Rg=2.5Ω

Thermal Resistance

• Junction-to-Case (Rth(j-c)): 0.42°C/W
• Junction-to-Ambient (Rth(j-a)): 62°C/W

Packaging

• Package Type: TO-247
• Moisture Sensitivity Level (MSL): 1

Applications

The ipp80r1k2p7 is suited for high-power applications including:

• Power Supplies
• Motor Control
• Inverters
• Switch Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)

Availability

The product is available for purchase through authorized distributors and directly from the manufacturer.

Note: For detailed information, including datasheet, application notes, and to place orders, please visit the official website or contact a sales representative.