Description

IPP60R040S7

Product Overview

The IPP60R040S7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for high-power applications. This module features a robust and reliable design, making it suitable for use in a wide range of industries, including renewable energy, industrial drives, and power supplies.

Key Features

• Collector-Emitter Voltage (Vces): 600 V
• Collector Current (Ic): 40 A
• Gate-Emitter Voltage (Vge): 15 V
• Switching Frequency: Up to 20 kHz
• Package Type: Module
• Thermal Resistance (Rthjc): 0.15 K/W
• Thermal Resistance (Rthjc-hs): 0.05 K/W
• Storage Temperature Range: -40°C to 125°C
• Operating Temperature Range: -40°C to 100°C

Electrical Characteristics

• Vces (V): 600 V
• Ic (A): 40 A
• Vge (V): 15 V
• Vce(sat) (V): 1.95 V
• Ic = 20 A, Vge = 15 V, Tj = 25°C
• Eon (μJ): 1200 μJ
• Eoff (μJ): 1200 μJ
• Pd (W): 200 W

Thermal Characteristics

• Rthjc (K/W): 0.15 K/W
• Rthjc-hs (K/W): 0.05 K/W
• Tj (°C): -40°C to 125°C

Mechanical Characteristics

• Package Type: Module
• Dimensions (mm): 38 x 24 x 7.5
• Weight (g): 30 g

Ordering Information

• Product Code: IPP60R040S7
• Package: Module
• Quantity: Please contact us for pricing and availability.