Description
IPP50R199CP
Insulated Gate Bipolar Transistor (IGBT)
Overview
The IPP50R199CP is a high-power Insulated Gate Bipolar Transistor (IGBT) designed for a wide range of applications, including motor control, power supplies, and renewable energy systems. With its high current and voltage ratings, this IGBT is suitable for high-power switching applications.
Features
- High Current Rating: Up to 47 A
- High Voltage Rating: Up to 650 V
- Low Saturation Voltage: Vce(sat) = 1.9 V
- High Switching Speed: Suitable for high-frequency applications
- Short Circuit Capability: Protects against fault conditions
Applications
- Motor control
- Power supplies
- Renewable energy systems
- Uninterruptible power supplies (UPS)
- Industrial power supplies
Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage | 650 | V |
| Gate-Emitter Voltage | ±20 | V |
| Collector Current | 47 | A |
| Pulsed Collector Current | 94 | A |
| Saturation Voltage | 1.9 | V |
| Junction Temperature | -40 to 150 | °C |
| Storage Temperature | -40 to 150 | °C |
Package and Weight
- Package Type: TO-247
- Weight: Approximately 20 grams
Reliability and Durability
The IPP50R199CP IGBT is designed to meet high reliability and durability standards, ensuring long-term performance in demanding applications.
Certifications and Compliance
The IPP50R199CP complies with relevant industry standards, ensuring safe and reliable operation in various applications.
Ordering Information
To order the IPP50R199CP, please contact our sales team for more information on pricing, lead times, and availability.