Description

IPL65R230C7

Insulated Gate Bipolar Transistor (IGBT)

The IPL65R230C7 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for use in a variety of applications, including switching power supplies, motor drives, and power conversion systems.

Key Features:

• Collector-Emitter Voltage (Vces): 650V
• Gate-Emitter Voltage (Vge): ±20V
• Collector Current (Ic): 65A
• Pulse Collector Current (Icp): 195A
• Switching Frequency (fsw): Up to 20kHz
• Thermal Resistance, Junction to Case (Rth(j-c)): 0.46K/W
• Thermal Resistance, Case to Sink (Rth(c-s)): 0.13K/W
• Maximum Junction Temperature (Tj): 175°C
• Maximum Storage Temperature (Tstg): -55°C to 150°C

Electrical Characteristics:

• Gate Threshold Voltage (Vge(th)): 4.5V
• Zero Gate Voltage Collector Current (Ices): 1mA
• Gate-Emitter Leakage Current (Ige): ±100nA
• Collector-Emitter Saturation Voltage (Vces(sat)): 2.5V
• Switching Time (ton, toff): 0.5μs, 1.5μs

Package and Pin Configuration:

The IPL65R230C7 is available in a TO-247 package with the following pin configuration:

• Gate: 1
• Collector: 2
• Emitter: 3

Applications:

The IPL65R230C7 is suitable for use in a variety of applications, including:

• Switching power supplies
• Motor drives
• Power conversion systems
• Uninterruptible power supplies (UPS)
• Renewable energy systems

Ordering Information:

To order the IPL65R230C7, please contact us or visit our website for more information.

Note: All parameters are subject to change without notice. Please verify the specifications before using the product.