IPL60R180P6 INFINEON

Description

IPL60R180P6 – 60A, 1800V IGBT Module

Overview

The IPL60R180P6 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for a wide range of applications requiring high power and efficiency. This module is part of a family of products offering a balance between switching speed and conduction losses.

Key Parameters

  • Collector Current (Ic): 60 A
  • Collector-Emitter Voltage (Vces): 1800 V
  • Gate-Emitter Voltage (Vge): ±20 V
  • Threshold Voltage (Vth): Typically 5.5 V
  • internal Gate Resistance (Rg): Typically 9.8 Ω

Electrical Characteristics

  • On-state Voltage (Vce(sat)): Typically 2.5 V at Ic = 60 A, Tj = 25°C
  • Switching Times:
    • Turn-on Delay Time (td(on)): Typically 0.3 μs
    • Rise Time (tr): Typically 0.45 μs
    • Turn-off Delay Time (td(off)): Typically 0.6 μs
    • Fall Time (tf): Typically 0.5 μs
  • Thermal Resistance, Junction to Case (Rth(j-c)): 0.15 K/W

Package Information

  • Package Type: Industry standard module package
  • Dimensions:
    • Length: 77 mm
    • Width: 37 mm
    • Height: 12.4 mm

Applications

The IPL60R180P6 IGBT module is suitable for various high-power applications including:

  • Motor Control: Inverters for AC motor drives, servo motors, and other industrial motor control systems.
  • UPS and Power Supplies: Uninterruptible power supplies, switch-mode power supplies, and other high-reliability DC power systems.
  • Industrial Power Conversion: High-power industrial applications such as welding equipment, plasma cutters, and induction heating.

Reliability and Quality

The IPL60R180P6 is manufactured with high-quality materials and undergoes rigorous testing to ensure reliability and consistency. It is designed to meet or exceed international standards for quality and performance.

Support and Documentation

For detailed specifications, datasheets, and application notes, please contact our technical support team or refer to our official documentation resources.