Description
IPDQ60R040S7
Product Overview
The IPDQ60R040S7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for a wide range of applications, including motor control, power supplies, and renewable energy systems.
Key Features
- Collector-Emitter Voltage (Vces): 600-650 V
- Gate-Emitter Voltage (Vges): ±20 V
- Collector Current (Ic): 40 A
- Pulse Collector Current (Icp): 80 A
- Switching Frequency (fs): up to 20 kHz
- Thermal Resistance (Rth(j-c)): 0.45-0.65 K/W
- Package: TO-247
Electrical Characteristics
On-State Characteristics
- Collector-Emitter Saturation Voltage (Vces(sat)): 1.7-2.1 V
- Forward Transconductance (gm): 40-60 S
Switching Characteristics
- Turn-On Delay Time (ton): 0.35-0.55 μs
- Rise Time (tr): 0.35-0.55 μs
- Turn-Off Delay Time (toff): 1.2-1.8 μs
- Fall Time (tf): 0.35-0.55 μs
Thermal Characteristics
- Junction Temperature (Tj): -40 to 150°C
- Storage Temperature (Tstg): -40 to 150°C
Mechanical Characteristics
- Weight: 10-15 g
- Dimensions: 16.5 x 5.5 x 2.5 mm
Applications
- Motor control
- Power supplies
- Renewable energy systems
- Industrial drives
- Automotive systems
Documentation
For more detailed information, please refer to the IPDQ60R040S7 datasheet.