Description
IPD80R280P7
Overview
The IPD80R280P7 is a high-performance power MOSFET device designed for a wide range of applications. Its unique combination of low on-state resistance, high blocking voltage, and fast switching speeds make it an ideal choice for use in power management and conversion systems.
Features
- High Drain-Source Voltage: 800 V
- Low On-Resistance: 280 mΩ
- High Continuous Drain Current: 20 A
- Fast Switching Speeds: Suitable for high-frequency applications
- Low Gate Charge: Reduces switching losses and minimizes gate drive requirements
- High Avalanche Energy Capability: Enhances reliability in demanding applications
Applications
- Power Management Systems
- DC-DC Converters
- Motor Control Systems
- Alternative Energy Systems
- Uninterruptible Power Supplies (UPS)
Mechanical Characteristics
- Package Type: TO-247
- Weight: Approximately 12 grams
- Mounting Type: Through-hole
Thermal Characteristics
- Junction-to-Case Thermal Resistance: 0.45 °C/W
- Case-to-Sink Thermal Resistance: 0.1 °C/W (with 0.5 mm thick, 1 oz copper)
- Maximum Junction Temperature: 175 °C
Gate Charge Characteristics
- Total Gate Charge (Qg): 110 nC
- Gate-Source Voltage (Vgs): ±30 V
Ratings
- Maximum Continuous Current (ID): 20 A
- Maximum Pulsed Current (IDM): 80 A
- Maximum Drain-Source Voltage (Vds): 800 V
- Maximum Gate-Source Voltage (Vgs): ±30 V
Additional Information
For detailed specifications, application notes, and reliability data, please refer to the official datasheet or contact our technical support team. The information provided is subject to change without notice and is provided as is.