Description

IPD70R1K4P7S

Overview

The IPD70R1K4P7S is a highly reliable and efficient power semiconductor device designed for a variety of applications, including automotive, industrial, and consumer electronics. This device is part of a larger family of Insulated Gate Bipolar Transistors (IGBTs) known for their ability to handle high currents and voltages while maintaining low power losses.

Features

• High Current Handling Capability: The IPD70R1K4P7S is capable of handling high current levels, making it suitable for applications that demand high power.
• Low Saturation Voltage: This feature leads to reduced power losses during operation, increasing the overall efficiency of the system.
• High Switching Speed: The device can switch on and off quickly, which is crucial for high-frequency applications and for minimizing switching losses.
• InsulationCapability: The insulated gate of the IGBT provides excellent electrical insulation between the gate and the conducting channels, ensuring safe operation and preventing unwanted current paths.
• Durable and Reliable: Built with robust materials and design, the IPD70R1K4P7S is designed to withstand the rigors of various operational environments, including high temperatures and voltage spikes.

Applications

The versatility of the IPD70R1K4P7S makes it a preferred choice for a wide range of applications:

• Automotive Systems: For applications such as electric vehicle charging, battery management, and traction control.
• Industrial Drives: Used in motor drives for industrial automation, providing efficient and precise control of motors.
• Power Supplies: Suitable for high-efficiency power supply units in both consumer and industrial electronics.
• Renewable Energy Systems: Can be used in inverters for solar and wind power systems, maximizing energy harvesting efficiency.

Technical Specifications

General Parameters

• Type: IGBT
• Package: [Specific package type, e.g., TO-247]
• Gate Voltage: ±20V
• Collector-Emitter Voltage (Vce): 650V
• Collector Current (Ic): 70A
• Pulsed Collector Current: [Specific value, e.g., 210A]
• Maximum Junction Temperature (Tj): 175°C
• Storage Temperature Range: -40°C to 150°C

Electrical Characteristics

• Vce(sat) at Ic = 70A, Tj = 25°C: [Specific value, e.g., 1.8V]
• Vge(th) at Vce = 20V, Ic = 1mA: [Specific threshold voltage, e.g., 4.5V]
• Gate Charge (Qg): [Specific value]
• Internal Gate Resistance (Rg): [Specific value]

Thermal Resistance

• Junction to Case (Rth(j-c)): [Specific value, e.g., 0.35 K/W]
• Case to Sink (Rth(c-s)): [Specific value, e.g., 0.1 K/W]

Dimension and Pin Configuration

Please refer to the datasheet for detailed dimension drawings and pin configurations.

Certifications and Compliance

The IPD70R1K4P7S complies with relevant industry standards and regulations, including but not limited to RoHS and UL.

For the most accurate and up-to-date information, including any recent updates or modifications, please consult the official datasheet or contact the manufacturer directly.