Description

IPD65R1K5CE

Description

The IPD65R1K5CE is a high-performance IGBT transistor designed for high-power applications. It features a low collector-to-emitter saturation voltage and a high collector current, making it suitable for a wide range of uses, including motor control, power supplies, and renewable energy systems.

Key Features

• Collector Current (IC): 65 A
• Collector-to-Emitter Voltage (VCE): 1200 V
• Emitter-to-Collector Voltage (VEC): 1200 V
• Gate-to-Emitter Voltage (VGE): ±20 V
• Collector-to-Emitter Saturation Voltage (VCE(sat)): 1.5 V
• Threshold Voltage (Vth): 5 V

Package and Dimensions

The IPD65R1K5CE comes in a TO-247 3-pin package, which is designed for high-power applications. The dimensions of the package are:

• Length: 20.95 mm
• Width: 15.8 mm
• Height: 4.6 mm (without mounting base)
• Mounting Base Thickness: 0.5 mm

Thermal Resistance

• Junction-to-Case Thermal Resistance (Rth(j-c)): 0.15 K/W
• Junction-to-Ambient Thermal Resistance (Rth(j-a)): 30 K/W (when mounted on a minimum pad size)

Electrical Characteristics

• Collector Current (IC): Up to 65 A
• Collector Current Pulsed (ICP): Up to 195 A
• Switching Times:
  • Turn-On Delay Time (ton): 0.15 μs
  • Rise Time (tr): 0.25 μs
  • Turn-Off Delay Time (toff): 1.2 μs
  • Fall Time (ft): 0.5 μs

Applications

• Motor Control
• Power Supplies
• Renewable Energy Systems
• High-Power Switching

Safety and Precautions

When handling the IPD65R1K5CE, follow proper safety procedures to avoid damage or injury. Ensure that the device is used within the specified parameters and handling precautions are taken to prevent electrostatic discharge (ESD).

Ordering Information

For ordering and inquiring about the IPD65R1K5CE, please contact our sales team or visit our website for more detailed information. Ensure to include the full part number (IPD65R1K5CE) when making inquiries.