Description
IPD65R1K4C6
Overview
The IPD65R1K4C6 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for high-power applications, including motor control, power conversion, and industrial drives. Its high current and voltage ratings make it suitable for demanding environments where reliability and efficiency are critical.
Features
- High Current Capability: The IPD65R1K4C6 can handle high currents, making it suitable for applications requiring substantial power handling.
- Low Saturation Voltage: It features a low saturation voltage, which contributes to reduced power losses and increased efficiency in the system.
- High Voltage Rating: With a high voltage rating, this IGBT is capable of withstanding high voltages, making it suitable for applications where voltage spikes are a concern.
- Fast Switching Times: The fast switching times of the IPD65R1K4C6 enable high-frequency operation, which is crucial for applications requiring precise control and fast response times.
Applications
- Motor Control: Suitable for high-power motor control applications, including industrial drives and servo motors, where high current and precise control are necessary.
- Power Conversion: Used in power conversion applications such as inverters and converters, where high efficiency and reliability are required.
- Industrial Drives: Ideal for industrial drive applications that require high power, high efficiency, and fast switching capabilities.
Specifications
- Collector-Emitter Voltage (Vces): 650 V
- Gate-Emitter Voltage (Vges): ±20 V
- Collector Current (Ic): 65 A
- Pulse Collector Current (Icp): 195 A
- Saturation Voltage (Vce(sat)): 1.8 V @ Ic = 65 A
- Switching Times:
- Turn-On Time (ton): 0.65 μs
- Turn-Off Time (toff): 1.3 μs
- Thermal Resistance (Rth(j-c)): 0.17 K/W
- Operating Junction Temperature (Tj): -40°C to 150°C
Package and Availability
The IPD65R1K4C6 is available in a TO-247 package, which is widely used for high-power applications due to its ability to dissipate heat efficiently. This package type also facilitates ease of mounting on heat sinks for further thermal management.
Documentation and Support
For detailed specifications, datasheets, and application notes, please refer to the official documentation. Technical support is available for design assistance, ensuring that the IPD65R1K4C6 meets the requirements of your application.
Conclusion
The IPD65R1K4C6 is a robust and efficient IGBT suitable for a wide range of high-power applications. Its combination of high current capability, low saturation voltage, and fast switching times makes it an ideal choice for systems requiring high performance and reliability.