IPD60R520C6 INFINEON

Description

IPD60R520C6

Product Overview

The IPD60R520C6 is a high-performance power MOSFET designed for a wide range of applications, including switching power supplies, motor control, and high-frequency amplifiers.

Key Features

  • Low On-Resistance: 52 mΩ (typ.)
  • High Current Capability: 60 A (DC)
  • High Voltage Rating: 600 V (DC)
  • Fast Switching Speed: 25 ns (typ.)
  • Low Gate Charge: 110 nC (typ.)
  • High Thermal Cycling Capability

Electrical Characteristics

Absolute Maximum Ratings

Parameter Symbol Value Unit
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 60 A
Pulsed Drain Current IDP 240 A
Junction Temperature TJ 175 °C
Storage Temperature TSTG -55 to 150 °C

Thermal Characteristics

Parameter Symbol Value Unit
Junction-to-Case Thermal Resistance RthJC 0.35 °C/W
Case-to-Sink Thermal Resistance RthCS 0.15 °C/W

Switching Characteristics

Parameter Symbol Value Unit
Turn-On Delay Time ton 12 ns
Rise Time tr 15 ns
Turn-Off Delay Time toff 25 ns
Fall Time tf 20 ns

Mechanical Characteristics

  • Package Type: TO-247
  • Weight: 12 g (typ.)
  • Lead-Free: Yes

Applications

  • Switching power supplies
  • Motor control
  • High-frequency amplifiers
  • DC-DC converters
  • Uninterruptible power supplies (UPS)

Documentation and Support

For more information, please refer to the datasheet and application notes.