Description
IPD60R520C6
Product Overview
The IPD60R520C6 is a high-performance power MOSFET designed for a wide range of applications, including switching power supplies, motor control, and high-frequency amplifiers.
Key Features
- Low On-Resistance: 52 mΩ (typ.)
- High Current Capability: 60 A (DC)
- High Voltage Rating: 600 V (DC)
- Fast Switching Speed: 25 ns (typ.)
- Low Gate Charge: 110 nC (typ.)
- High Thermal Cycling Capability
Electrical Characteristics
Absolute Maximum Ratings
Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDS |
600 |
V |
Gate-Source Voltage |
VGS |
±20 |
V |
Continuous Drain Current |
ID |
60 |
A |
Pulsed Drain Current |
IDP |
240 |
A |
Junction Temperature |
TJ |
175 |
°C |
Storage Temperature |
TSTG |
-55 to 150 |
°C |
Thermal Characteristics
Parameter |
Symbol |
Value |
Unit |
Junction-to-Case Thermal Resistance |
RthJC |
0.35 |
°C/W |
Case-to-Sink Thermal Resistance |
RthCS |
0.15 |
°C/W |
Switching Characteristics
Parameter |
Symbol |
Value |
Unit |
Turn-On Delay Time |
ton |
12 |
ns |
Rise Time |
tr |
15 |
ns |
Turn-Off Delay Time |
toff |
25 |
ns |
Fall Time |
tf |
20 |
ns |
Mechanical Characteristics
- Package Type: TO-247
- Weight: 12 g (typ.)
- Lead-Free: Yes
Applications
- Switching power supplies
- Motor control
- High-frequency amplifiers
- DC-DC converters
- Uninterruptible power supplies (UPS)
Documentation and Support
For more information, please refer to the datasheet and application notes.