Description
IPD60R360PFD7S
Product Description
The IPD60R360PFD7S is a high-performance, highly reliable Insulated Gate Bipolar Transistor (IGBT) module designed for a wide range of applications, including motor control, power supplies, and renewable energy systems.
Key Features
- Collector-Emitter Voltage (Vce): 600 V
- Gate-Emitter Voltage (Vge): ±20 V
- Collector Current (Ic): 60 A
- Pulse Collector Current (Icp): 180 A
- Emitter-Collector Voltage (Vce(sat)) @ Ic = 60 A, Tj = 125°C: 1.95 V
- Internal Gate Resistance (Rg): 6.3 Ω
- Switching Frequency (fsw): Up to 20 kHz
- Operating Junction Temperature (Tj): -40°C to 150°C
- Storage Temperature (Tstg): -40°C to 125°C
- Package Type: PFD-7S
Electrical Characteristics
Static Electrical Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | Vce | 600 | V |
| Gate-Emitter Voltage | Vge | ±20 | V |
| Collector Current | Ic | 60 | A |
| Pulse Collector Current | Icp | 180 | A |
| Emitter-Collector Voltage | Vce(sat) | 1.95 | V |
Dynamic Electrical Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Internal Gate Resistance | Rg | 6.3 | Ω |
| Switching Frequency | fsw | Up to 20 | kHz |
Mechanical Characteristics
- Package Type: PFD-7S
- Operating Junction Temperature: -40°C to 150°C
- Storage Temperature: -40°C to 125°C
Applications
The IPD60R360PFD7S IGBT module is suitable for a wide range of applications, including:
- Motor control
- Power supplies
- Renewable energy systems
- Electric vehicles
- Industrial automation
Documentation
For more information, please refer to the datasheet and other documentation available on our website.