Description
IPD50P04P4L-11 – 594
Product Overview
The IPD50P04P4L-11 is a high-performance power MOSFET device designed for a wide range of applications, including power supplies, motor control, and industrial electronics.
Key Features
- High Drain-Source Voltage: 500 V
- Low On-Resistance: 0.235 Ω
- High Gate Threshold Voltage: 4.0 V
- Low Input Capacitance: 1200 pF
- High Avalanche Energy: 250 mJ
Product Specifications
Electrical Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 500 | V |
| Gate-Source Voltage | VGS | ±30 | V |
| Drain Current | ID | 50 | A |
| On-Resistance | RDS(on) | 0.235 | Ω |
| Gate Threshold Voltage | VGS(th) | 4.0 | V |
| Input Capacitance | Ciss | 1200 | pF |
| Output Capacitance | Coss | 250 | pF |
| Reverse Transfer Capacitance | Crss | 50 | pF |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction-to-Case Thermal Resistance | Rth(j-c) | 0.5 | °C/W |
| Case-to-Sink Thermal Resistance | Rth(c-s) | 0.2 | °C/W |
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature | Tstg | -40 to 150 | °C |
Package Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Package Type | TO-247 | ||
| Package Material | Cu | ||
| Lead Material | Sn96.5Ag3.0Cu0.5 | ||
| MSL | 1 |
Applications
The IPD50P04P4L-11 is suitable for a wide range of applications, including:
- Power supplies
- Motor control
- Industrial electronics
- Automotive electronics
- Renewable energy systems
Documents
Ordering Information
To order the IPD50P04P4L-11, please contact us at sales@tt-chip.net or visit our website at www.tt-chip.net.