Description
IPD50N06S4-09
Power Transistor
Overview
The IPD50N06S4-09 is a high-performance power transistor designed for a wide range of applications. It is a N-channel, enhancement mode device with a high current rating and low on-resistance.
Features
- High Current Rating: 50 A
- Low On-Resistance: 6 mΩ
- High Voltage Rating: 60 V
- N-channel, Enhancement Mode: Suitable for high-side switching applications
- TO-252 Package: Compact and thermally efficient package
Electrical Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | Vds | 60 | V |
| Gate-Source Voltage | Vgs | 10 | V |
| Drain Current | Id | 50 | A |
| On-Resistance | Rds(on) | 6 | mΩ |
| Threshold Voltage | Vth | 1 | V |
| Gate Charge | Qg | 24 | nC |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction-to-Case Thermal Resistance | Rth(j-c) | 1.5 | K/W |
| Junction-to-Ambient Thermal Resistance | Rth(j-a) | 62.5 | K/W |
| Operating Junction Temperature | Tj | -40 to 175 | °C |
Package Information
- Package Type: TO-252
- Package Dimensions: 6.73 x 5.03 x 1.95 mm
- Lead Thickness: 0.8 mm
Applications
- High-Side Switching: Suitable for high-side switching applications
- Power Management: Ideal for power management applications
- Industrial Controls: Suitable for industrial control applications
- Automotive Systems: Suitable for automotive systems applications
Ordering Information
- Part Number: IPD50N06S4-09
- Package Type: TO-252