Description
IPD50N04S4L-08 Infineon
Product Overview
The IPD50N04S4L-08 is a highly reliable and efficient power MOSFET device from Infineon, designed for a wide range of high-power applications. This device features a low on-resistance and high switching speeds, making it suitable for use in power supplies, motor control, and other high-performance systems.
Key Features
- Drain-Source Voltage (Vds): 40 V
- Gate-Source Voltage (Vgs): ±20 V
- Continuous Drain Current (Id): 50 A
- Pulsed Drain Current (Id pulse): 200 A
- On-Resistance (Rds(on)): 4.4 mΩ
- Threshold Voltage (Vth): 2.5 V
- Diode Reverse Recovery Time (trr): 140 ns
- Diode Reverse Recovery Charge (Qrr): 2.8 μC
- Package: TO-252
- Operating Temperature (Tj): -55°C to 175°C
Product Specifications
- Type: N-Channel MOSFET
- Configuration: Single
- Transistor Polarity: N-Channel
- Maximum Power Dissipation (Pd): 150 W
- Thermal Resistance (Rth(j-a)): 62 K/W
- Thermal Resistance (Rth(j-c)): 10 K/W
Applications
- Power Supplies: Switch-mode power supplies, DC-DC converters, and AC-DC converters
- Motor Control: Motor drives, servo motors, and stepper motors
- Industrial Automation: Robotics, machine tools, and process control systems
- Medical Equipment: Defibrillators, patient monitoring systems, and medical imaging equipment
- Aerospace and Defense: Radar systems, communication systems, and navigation systems
Package and Availability
The IPD50N04S4L-08 is available in a TO-252 package and is suitable for surface-mount assembly. This device is in stock and available for immediate shipment.