Description
IPB65R150CFDA
Overview
The IPB65R150CFDA is a highly reliable and efficient IGBT (Insulated Gate Bipolar Transistor) module designed for high-power applications. This module is part of a larger family of products from the same manufacturer, each tailored to meet specific needs in terms of power handling, switching speed, and package type.
Specifications
- Type: IGBT Module
- Package: 62mm x 35mm (standard module package)
- Collector-Emitter Voltage (Vces): 1500V
- Collector Current (Ic): 65A
- Pulse Collector Current (Icp): Up to 195A
- Gate-Emitter Voltage (Vge): ±20V
- Internal Gate Resistance (Rg): Typically 9.5Ω
- Switching Time:
- Turn-On Delay Time (td(on)): 0.45μs (typical)
- Rise Time (tr): 0.7μs (typical)
- Turn-Off Delay Time (td(off)): 1.6μs (typical)
- Fall Time (tf): 1.1μs (typical)
- Thermal Resistance (Rth):
- Junction to Case (Rth(j-c)): 0.18K/W (typical)
- Case to Sink (Rth(c-s)): Depends on the mounting condition
- Maximum Junction Temperature (Tj): 150°C
- Storage Temperature Range (Tstg): -40°C to 125°C
Features
- High Power Density
- Low Switching Losses
- High Reliability
- Wide Range of Applications
Applications
- Industrial Power Supplies: High-power DC-DC converters, AC-DC converters
- Motor Control: Inverters for induction motors, servo motors, and other high-power motor applications
- Renewable Energy Systems: Solar inverters, wind power inverters
- HVDC Systems: High-voltage direct current transmission systems
- Medical Equipment: High-power medical devices requiring precise control and high reliability
Mounting and Handling
- Mounting: The module is designed for base plate mounting, ensuring good thermal contact for efficient heat dissipation.
- Handling: Care should be taken to avoid damage to the terminals and the module itself during handling and mounting.
Documentation and Support
For detailed documentation, including datasheets, application notes, and design guides, please refer to the official website of the manufacturer or contact their technical support team.