Description

IPB60R160P6

Insulated Gate Bipolar Transistor (IGBT)

Overview

The IPB60R160P6 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This device offers improved switching performance, low conduction losses, and high reliability.

Features

• Collector-Emitter Voltage (Vces): 600V
• Gate-Emitter Voltage (Vges): ±20V
• Collector Current (Ic): 60A
• Pulse Collector Current (Icp): 120A
• Emissions Type: RoHS compliant

Electrical Characteristics

• Collector-Emitter Saturation Voltage (Vce(sat)): 1.9V (pulsed)
• Gate Threshold Voltage (Vge(th)): 4.5V
• Gate-Emitter Leakage Current (Iges): 100nA
• Internal Gate Resistance (Rg): 13.5Ω
• Switching Times:
  • Turn-on Delay Time (td(on)): 0.15μs (typical)
  • Rise Time (tr): 0.23μs (typical)
  • Turn-off Delay Time (td(off)): 0.55μs (typical)
  • Fall Time (tf): 0.33μs (typical)

Thermal Resistance

• Junction-to-Case Thermal Resistance (Rth(j-c)): 0.45°C/W (typical)
• Case-to-Sink Thermal Resistance (Rth(c-s)): 0.14°C/W (typical)

Package and Weight

• Package Type: TO-247
• Weight: approximately 18g

Applications

The IPB60R160P6 IGBT is suitable for a wide range of high-power applications, including:

• Motor control
• Power supplies
• Inverters
• Uninterruptible power supplies (UPS)
• Switch-mode power supplies

Ordering Information

To order the IPB60R160P6, please contact your local distributor or sales representative for more information.