Description

IPB60R090CFD7

Description

The IPB60R090CFD7 is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for high-reliability applications. This module is part of the industry-standard package family, offering a high current handling capability and low switching losses.

Features

• High current handling capability
• Low switching losses
• High reliability
• Industry-standard package

Specifications

General Parameters

• Collector-Emitter Voltage (Vce): 900 V
• Collector Current (Ic): 60 A
• Gate-Emitter Voltage (Vge): ±20 V
• Junction Temperature (Tj): -40 to 150 °C
• Storage Temperature (Tst): -40 to 150 °C

Electrical Characteristics

• Vce(sat) at Ic = 60 A, Vge = 15 V: 1.85 V
• Vge(th) at Ic = 1 mA, Vce = Vge: 4.5 V
• Rth(j-c) Thermal Resistance, Junction to Case: 0.15 K/W

Switching Characteristics

• Turn-On Switching Energy (Eon) at Ic = 60 A, Vce = 900 V, Vge = 15 V, RG = 1.4 Ω: 1.9 mJ
• Turn-Off Switching Energy (Eoff) at Ic = 60 A, Vce = 900 V, Vge = 15 V, RG = 1.4 Ω: 4.3 mJ

Mechanical Characteristics

• Package Type: Industry-standard module
• Weight: approximately 60 g
• Dimensions: 62 mm x 34 mm x 12.5 mm

Environmental Conditions

• Ambient Temperature (Ta): -40 to 40 °C
• Humidity: up to 80% relative humidity
• Vibration: 10 to 2000 Hz, 1.5 mm double amplitude

Application

The IPB60R090CFD7 IGBT module is suitable for a variety of high-power applications, including:

• Motor control and drives
• Power supplies and converters
• Renewable energy systems
• Industrial automation and control systems

Ordering Information

For ordering and inquiries, please contact our sales team with the following part number: IPB60R090CFD7.