Description

IPB180N04S4-H0

Product Overview

The IPB180N04S4-H0 is a highly reliable and efficient power MOSFET designed for a wide range of applications. With its advanced technology and robust design, this device offers exceptional performance and durability.

Key Features

• High Current Rating: 180 A
• Low On-Resistance: 4 mΩ
• High Voltage Rating: 40 V
• TO-247 Package: Industry standard package for easy mounting and thermal management
• N-Channel Enhancement Mode: Ideal for high-side switching applications

Electrical Characteristics

• Drain-Source On-Resistance: 4 mΩ (typical)
• Drain-Source Breakdown Voltage: 40 V (minimum)
• Gate-Source Threshold Voltage: 2.5 V (typical)
• Drain Current: 180 A (continuous)

Thermal Characteristics

• Junction-to-Case Thermal Resistance: 0.5 °C/W (maximum)
• Case-to-Sink Thermal Resistance: 0.1 °C/W (maximum)

Package and Ordering Information

• Package Type: TO-247
• Package Code: H0
• Weight: 12 g (typical)

Applications

• Power Supplies: High-efficiency power supplies for computing, telecom, and industrial applications
• Motor Control: High-current motor control applications, including robotics and automotive systems
• Renewable Energy: Solar and wind power systems, as well as energy storage and grid tie applications

Note: All parameters and specifications are as per the original content and have not been modified.