Description

IPAN70R360P7S

High-Performance IGBT Module

The IPAN70R360P7S is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for a wide range of applications, including industrial drives, renewable energy systems, and power supplies. This module features a high current rating and low losses, making it an ideal choice for high-performance power electronics.

Key Features:

• High current rating: 70 A
• High voltage rating: 600 V
• Low saturation voltage: 1.5 V
• High switching frequency: 20 kHz
• Short-circuit withstand time: 10 μs
• Isolation voltage: 2500 V AC

Package and Pinout:

The IPAN70R360P7S is housed in a compact, industry-standard package with a maximum width of 38 mm and a maximum height of 17 mm. The module features a 7-pin interface with the following pin assignments:

• Pin 1: Emitter
• Pin 2: Collector
• Pin 3: Gate
• Pin 4: Auxiliary emitter
• Pin 5: NC (no connection)
• Pin 6: Auxiliary collector
• Pin 7: NC (no connection)

Thermal Resistance:

The IPAN70R360P7S has a thermal resistance of 0.5 K/W (junction to case), allowing for efficient heat dissipation and reliable operation in high-power applications.

Mounting and Handling:

The IPAN70R360P7S is designed for screw mounting and features a built-in thermal interface for secure attachment to a heat sink. The module is also RoHS compliant and lead-free, making it suitable for use in environmentally friendly designs.

Applications:

The IPAN70R360P7S is suitable for a wide range of high-power applications, including:

• Industrial drives and motor controls
• Renewable energy systems (e.g., solar, wind)
• Power supplies and converters
• Electric vehicle charging systems

Ordering Information:

To order the IPAN70R360P7S, please contact us for more information on pricing, availability, and delivery schedules. We also offer custom packaging and labeling options to meet your specific requirements.