Description

IPA60R600P7S – IGBT Module

Overview

The IPA60R600P7S is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for use in a wide range of applications, including power conversion, motor control, and welding. This module features a compact design, high current handling capability, and low switching losses.

Key Features

• IGBT Type: Trench gate field-stop technology
• Collector-Emitter Voltage (Vce): 600 V
• Collector Current (Ic): 60 A
• Gate-Emitter Voltage (Vge): ±20 V
• Switching Frequency: Up to 20 kHz
• Thermal Resistance (Rth(j-c)): 0.2 K/W
• Maximum Junction Temperature (Tj(max)): 150°C
• Storage Temperature Range (Tstg): -40°C to 125°C

Electrical Characteristics

• Static Characteristics:
  • Collector-Emitter Voltage (Vce(sat)): 1.9 V
  • Gate-Emitter Threshold Voltage (Vge(th)): 6.5 V
• Dynamic Characteristics:
  • Turn-On Delay Time (td(on)): 0.35 μs
  • Turn-Off Delay Time (td(off)): 1.2 μs
  • Rise Time (tr): 0.25 μs
  • Fall Time (tf): 0.5 μs

Package and Dimensions

• Package Type: 48-pin module
• Dimensions: 42 mm x 25 mm x 14 mm
• Weight: approximately 40 g

Applications

• Power Conversion: Inverters, converters, and power supplies
• Motor Control: AC motor drives, servo drives, and robotics
• Welding: Resistance welding, arc welding, and plasma welding

Documents and Support

• Technical Datasheet: Available for download
• Application Notes: Consult our website for application-specific information
• Customer Support: Contact us for technical assistance and support