IPA60R600C6 INFINEON

Description

IPA60R600C6 – IGBT Module

Overview
The IPA60R600C6 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for a wide range of applications, including motor control, power supplies, and renewable energy systems. This module features a highly efficient and reliable design, making it an ideal choice for demanding applications.

Key Features

  • High Current Rating: 60 A
  • High Voltage Rating: 600 V
  • Low Saturation Voltage: 1.7 V
  • High Switching Frequency: Up to 20 kHz
  • Short-Circuit Withstand Time: 10 μs
  • Gate-Emitter Voltage: 15 V

Electrical Characteristics

Parameter Symbol Value Unit
Collector-Emitter Voltage Vce 600 V
Gate-Emitter Voltage Vge 15 V
Collector Current Ic 60 A
Saturation Voltage Vce(sat) 1.7 V
Switching Frequency fsw 20 kHz
Short-Circuit Withstand Time tc 10 μs

Thermal Characteristics

Parameter Symbol Value Unit
Junction Temperature Tj 150 °C
Case Temperature Tc 80 °C
Thermal Resistance (Junction to Case) Rth(j-c) 0.15 K/W

Mechanical Characteristics

Parameter Symbol Value Unit
Module Size 38 x 25 mm
Weight 30 g

Applications

The IPA60R600C6 IGBT module is suitable for a wide range of applications, including:

  • Motor control
  • Power supplies
  • Renewable energy systems
  • Industrial drives
  • Electric vehicles

Reliability and Quality

The IPA60R600C6 module is designed to provide high reliability and quality, with a robust design and rigorous testing to ensure maximum performance and longevity.