Description

IPA60R360P7SXKSA1 Infineon

Product Overview

The IPA60R360P7SXKSA1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed by Infineon, a leading manufacturer of semiconductor solutions. This module is part of the TRENCHSTOP series, known for its high reliability, low losses, and excellent thermal performance.

Key Features

• Collector-Emitter Voltage (Vces): 600 V
• Collector Current (Ic): 60 A
• Gate-Emitter Voltage (Vge): ±20 V
• Switching Frequency: up to 100 kHz
• Module Configuration: Seven IGBTs with anti-parallel diodes
• Thermal Resistance (Rth(j-c)): 0.11 K/W
• Housing: FullPAK (TO-247 equivalent)

Electrical Characteristics

• On-State Voltage (Vce(sat)): 1.9 V at Ic = 60 A, Tj = 125°C
• Turn-On Losses (Eon): 1.2 mJ at Ic = 60 A, Vcc = 300 V
• Turn-Off Losses (Eoff): 1.1 mJ at Ic = 60 A, Vcc = 300 V
• Short-Circuit Withstand Time: 10 μs

Thermal and Mechanical Characteristics

• Operating Junction Temperature (Tj): -40°C to 150°C
• Storage Temperature (Tstg): -40°C to 150°C
• Soldering Temperature: up to 260°C for 10 seconds
• Weight: approximately 50 grams

Applications

The IPA60R360P7SXKSA1 is suitable for various high-power applications, including:

• Motor control and drives
• Power supplies and converters
• Renewable energy systems
• Electric vehicles and hybrid vehicles
• Industrial automation and control systems

Documentation and Support

For more detailed information, please refer to the official Infineon datasheet and application notes. Additional support and resources are available from Infineon’s website and authorized distributors.