Description
IPA60R230P6
Product Overview
The IPA60R230P6 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for high-power applications. It features a robust and compact design, making it suitable for a wide range of applications, including motor control, power supplies, and renewable energy systems.
Key Features
- Collector-Emitter Voltage (Vce): 600V
- Collector Current (Ic): 60A
- Gate-Emitter Voltage (Vge): ±20V
- Internal Gate Resistance (Rg): 6.0 Ω
- Package Type: Module
- Operating Temperature Range: -40°C to 125°C
Electrical Characteristics
- Collector-Emitter Saturation Voltage (Vce(sat)): 2.5V @ Ic = 60A
- Gate Threshold Voltage (Vge(th)): 6.0V @ Ic = 1mA
- Turn-On Switching Energy (Eon): 3.5mJ @ Ic = 60A
- Turn-Off Switching Energy (Eoff): 4.0mJ @ Ic = 60A
- Short-Circuit Withstand Time (tc): 10μs
Thermal Characteristics
- Junction-to-Case Thermal Resistance (Rth(j-c)): 0.50°C/W
- Case-to-Sink Thermal Resistance (Rth(c-s)): 0.15°C/W
- Maximum Junction Temperature (Tj): 150°C
Mechanical Characteristics
- Module Dimensions: 38mm x 25mm x 10mm
- Weight: 50g
- Mounting Type: Screw mounting
Applications
The IPA60R230P6 is suitable for a wide range of high-power applications, including:
- Motor control
- Power supplies
- Renewable energy systems
- Industrial drives
- Electric vehicles
Ordering Information
To order the IPA60R230P6, please contact our sales team or visit our website for more information.
Warranty and Support
We offer a 1-year warranty and dedicated technical support for the IPA60R230P6. Please contact our support team for any questions or concerns.