Description

FQT1N60CTF-WS Product Information

The FQT1N60CTF-WS is a high-performance N-Channel MOSFET transistor, designed for high-power applications.

Key Features:

• N-Channel MOSFET Transistor
• High Power Handling Capability
• Low On-Resistance
• High Switching Speed

Product Specifications:

• Part Number: FQT1N60CTF-WS
• Package Type: TO-252 (DPAK)
• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (Vds): 600V
• Gate-Source Voltage (Vgs): ±30V
• Drain Current (Id): 11A
• On-Resistance (Rds(on)): 0.460Ω
• Pulsed Drain Current (Id(pulse)): 44A
• Maximum Power Dissipation (Pd): 125W
• Operating Junction Temperature (Tj): -55°C to 150°C
• Storage Temperature (Tstg): -55°C to 150°C

Electrical Characteristics:

• Breakdown Voltage (V(BR)DSS): 600V
• Threshold Voltage (Vgs(th)): 2.5V to 4.0V
• Drain-Source On-Voltage (Vds(on)): 2.5V
• Input Capacitance (Ciss): 1040pF
• Output Capacitance (Coss): 220pF
• Reverse Transfer Capacitance (Crss): 30pF

Mechanical Characteristics:

• Mounting Type: Through-Hole
• Weight: 2.1g
• Package Dimensions: 6.60mm x 5.30mm x 2.30mm

Applications:

• High Power Switching
• DC-DC Converters
• Motor Control
• Power Supplies
• Audio Amplifiers

Additional Information:

• RoHS Compliant
• Halogen-Free
• Lead-Free