FQN1N50CTA ON

Description

FQN1N50CTA ON Semiconductor N-Channel MOSFET

Overview

The FQN1N50CTA is a high voltage, high current N-Channel MOSFET designed for high power applications. This device is suitable for use in a wide range of applications, including switchmode power supplies, motor control, and high voltage switching.

Features

  • High Voltage Rating: 500V
  • High Current Rating: 5A
  • Low On-Resistance: 1.5Ω
  • High Switching Speed: Suitable for high frequency switching applications
  • TO-3PN Package: Industry standard package for high power applications

Specifications

  • Drain-Source Voltage (Vds): 500V
  • Gate-Source Voltage (Vgs): ±30V
  • Continuous Drain Current (Id): 5A
  • Pulsed Drain Current (Idm): 20A
  • On-Resistance (Rds(on)): 1.5Ω
  • Input Capacitance (Ciss): 150pF
  • Output Capacitance (Coss): 50pF
  • Reverse Transfer Capacitance (Crss): 10pF
  • Threshold Voltage (Vth): 2.5V
  • Storage Temperature Range (Tstg): -55°C to 150°C
  • Operating Junction Temperature Range (Tj): -55°C to 150°C

Mechanical Characteristics

  • Package Type: TO-3PN
  • Weight: 2.5g
  • Dimensions: 10.92mm x 10.31mm x 4.78mm

Ordering Information

  • Part Number: FQN1N50CTA
  • Package: TO-3PN

Applications

  • Switchmode power supplies
  • Motor control
  • High voltage switching
  • Power management
  • Industrial controls

Note: All parameters and specifications are subject to change without notice. Please consult the manufacturer’s datasheet for the most up-to-date information.