Description

FQD8P10TM-F085

Product Overview

The FQD8P10TM-F085 is a high-performance transistor designed for use in a wide range of applications. This device is built with advanced technology to provide reliable and efficient operation.

Key Features

• Type: Transistor
• Package Type: TO-263
• Polarity: N-Channel
• Drain-Source Voltage (Vds): 1000 V
• Gate-Source Voltage (Vgs): ±30 V
• Drain Current (Id): 8 A
• On-Resistance (Rds(on)): 0.85 Ω
• Threshold Voltage (Vth): 2.5 V

Electrical Characteristics

• Drain-Source Breakdown Voltage (Vds): 1000 V
• Static Drain-Source On-Resistance (Rds(on)): 0.85 Ω
• Gate Threshold Voltage (Vth): 2.5 V
• Drain Current (Id): 8 A
• Pulsed Drain Current (Id): 16 A

Thermal Characteristics

• Junction-to-Case Thermal Resistance (Rth(j-c)): 1.5 °C/W
• Junction-to-Ambient Thermal Resistance (Rth(j-a)): 62.5 °C/W

Mechanical Characteristics

• Package Type: TO-263
• Weight: 2.2 g
• Lead Free: Yes
• Halogen Free: Yes

Applications

• Power Switching
• DC-DC Converters
• Motor Control
• High-Frequency Switching