Description

FQB19N20LTMT ON Semiconductor N-Channel MOSFET

Overview
The FQB19N20LTMT is a high-performance, N-Channel MOSFET from ON Semiconductor, designed for a wide range of applications, including DC-DC converters, motor control, and power management systems.

Features

• High Drain Current: 110 A
• Low On-Resistance: 19 mΩ
• High Voltage Rating: 200 V
• Low Gate Charge: 35 nC
• High Power Dissipation: 260 W
• TO-252 (DPAK) Package: Surface-mount package for easy assembly and minimal board space

Electrical Characteristics

• Drain-Source Voltage (Vds): 200 V
• Gate-Source Voltage (Vgs): 30 V
• Threshold Voltage (Vth): 2.0 V
• On-Resistance (Rds(on)): 19 mΩ
• Drain Current (Id): 110 A
• Pulsed Drain Current (Idp): 220 A
• Gate Charge (Qg): 35 nC
• Gate-Source Charge (Qgs): 10 nC
• Gate-Drain Charge (Qgd): 18 nC

Thermal Characteristics

• Junction-to-Case Thermal Resistance (Rth(j-c)): 0.75 °C/W
• Junction-to-Ambient Thermal Resistance (Rth(j-a)): 62.5 °C/W

Mechanical Characteristics

• Package Type: TO-252 (DPAK)
• Package Dimensions: 6.73 x 5.21 x 2.39 mm
• Weight: 1.2 g

Applications

• DC-DC Converters: High-frequency switching applications
• Motor Control: High-power motor control systems
• Power Management Systems: High-performance power management systems
• Industrial Power Systems: High-reliability industrial power systems

Documentation

• Data Sheet: FQB19N20LTMT Datasheet
• Application Note: Using the FQB19N20LTMT in DC-DC Converters

Ordering Information

• Part Number: FQB19N20LTMT
• Package Type: TO-252 (DPAK)
• Quantity: 500 pieces per reel