Description
FOD0710R2 ON Semiconductor N-Channel MOSFET
Overview
The FOD0710R2 is an N-Channel MOSFET manufactured by ON Semiconductor. It is designed for high-speed switching applications, providing low on-resistance and high current handling capabilities.
Features
- Low On-Resistance: RDS(ON) = 0.071 Ω (typical) at VGS = 10V
- High Current Rating: ID = 30A (continuous) at TC = 25°C
- High-Speed Switching: Switching time: tr = 11ns (typical), tf = 13ns (typical)
- Low Gate Charge: Qg = 11nC (typical)
- High Voltage Rating: VDS = 30V (maximum), VGS = ±20V (maximum)
Electrical Characteristics
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | – | – | 30 | V |
| Gate-Source Voltage | VGS | – | – | ±20 | V |
| Continuous Drain Current | ID | – | 30 | – | A |
| Pulsed Drain Current | IDP | – | 90 | – | A |
| On-Resistance | RDS(ON) | – | 0.071 | – | Ω |
| Gate Charge | Qg | – | 11 | – | nC |
| Switching Time (rise) | tr | – | 11 | – | ns |
| Switching Time (fall) | tf | – | 13 | – | ns |
Package and Dimensions
- Package Type: SO-8
- Lead Finish: Matte Tin
- Dimensions: 5.00mm x 4.00mm x 1.50mm (typical)
Thermal Information
- Thermal Resistance (Junction to Case): RθJC = 50°C/W (maximum)
- Thermal Resistance (Junction to Ambient): RθJA = 62.5°C/W (maximum)
- Operating Temperature Range: TJ = -55°C to 150°C (minimum to maximum)
Applications
- DC-DC Converters
- Power Supplies
- Motor Control
- High-Speed Switching