Description
FNA41560B2-ON
Product Overview
The FNA41560B2-ON is a high-performance, N-Channel Power MOSFET designed for use in a wide range of applications, including switching power supplies, motor control, and power management systems.
Key Features
- Low On-Resistance: 0.036 Ω (typical) at VGS = 10V
- High Current Capability: 100 A (DC) at TC = 25°C
- Low Gate Charge: 50 nC (typical) at VGS = 10V
- High Switching Speed: 10 ns (typical) at VGS = 10V
Electrical Characteristics
| Parameter | Conditions | Min | Typ | Max | |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | – | – | 60 V | |
| Gate-Source Voltage | VGS | – | – | ±20 V | |
| Drain Current | ID | – | 100 A | – | |
| On-Resistance | RDS(on) | VGS = 10V | – | 0.036 Ω | – |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 μA | 1.5 V | 2.5 V | 3.5 V |
| Input Capacitance | Ciss | VDS = 0V, VGS = 0V, f = 1MHz | – | 2550 pF | – |
| Output Capacitance | Coss | VDS = 0V, VGS = 0V, f = 1MHz | – | 440 pF | – |
| Reverse Transfer Capacitance | Crss | VDS = 0V, VGS = 0V, f = 1MHz | – | 120 pF | – |
Thermal Characteristics
| Parameter | Conditions | Min | Typ | Max |
|---|---|---|---|---|
| Junction-to-Case Thermal Resistance | RthJC | – | 0.5 °C/W | – |
| Case-to-Sink Thermal Resistance | RthCS | – | 0.1 °C/W | – |
| Junction Temperature | TJ | – | – | 150 °C |
| Storage Temperature | Tstg | – | -40 °C | 150 °C |
Package Dimensions
The FNA41560B2-ON is available in a TO-220 package, with the following dimensions:
- Package Type: TO-220
- Package Weight: 2.2 g (typical)
- Lead Free: Yes
Ordering Information
To order the FNA41560B2-ON, please use the following part number:
- Part Number: FNA41560B2-ON
Note: The information provided is subject to change without notice. Please contact the manufacturer for the latest information and specifications.