Description
FFSD1065B-F085 ON
Overview
The FFSD1065B-F085 ON is a high-performance, low-power consumption N-channel trench MOSFET designed for a wide range of applications, including motor control, power supplies, and high-power switching.
Features
- Low On-Resistance: Rds(on) = 12.5mΩ (micro-ohms)
- High Drain Current: Id = 80A
- Low Gate Charge: Qg = 38nC
- High Switching Speed: tf = 23ns, trr = 130ns
- Low Threshold Voltage: Vth = 0.7V
Parameters
- Drain-Source Voltage: Vds = 30V
- Gate-Source Voltage: Vgs = ±20V
- Maximum Junction Temperature: Tj = 175°C
- Maximum Storage Temperature: Tstg = -55°C to 150°C
Electrical Characteristics
- On-Resistance: Rds(on) = 12.5mΩ @ Vgs = 10V, Id = 40A
- Drain Current: Id = 80A @ Vds = 30V, Vgs = 10V
- Gate Threshold Voltage: Vth = 0.7V @ Id = 250μA
- Leakage Current: Idss = 10μA @ Vds = 30V, Vgs = 0V
Thermal Resistance
- Junction-to-Case: Rth(j-c) = 0.85°C/W
- Junction-to-Ambient: Rth(j-a) = 62.5°C/W
Mechanical Characteristics
- Package: TO-220
- Weight: 6.8g
- Dimensions: 10.28mm x 4.83mm x 15.75mm
Applications
- Motor control
- Power supplies
- High-power switching
- Industrial control
- Automotive systems