FFSD1065B-F085 ON

Description

FFSD1065B-F085 ON

Overview

The FFSD1065B-F085 ON is a high-performance, low-power consumption N-channel trench MOSFET designed for a wide range of applications, including motor control, power supplies, and high-power switching.

Features

  • Low On-Resistance: Rds(on) = 12.5mΩ (micro-ohms)
  • High Drain Current: Id = 80A
  • Low Gate Charge: Qg = 38nC
  • High Switching Speed: tf = 23ns, trr = 130ns
  • Low Threshold Voltage: Vth = 0.7V

Parameters

  • Drain-Source Voltage: Vds = 30V
  • Gate-Source Voltage: Vgs = ±20V
  • Maximum Junction Temperature: Tj = 175°C
  • Maximum Storage Temperature: Tstg = -55°C to 150°C

Electrical Characteristics

  • On-Resistance: Rds(on) = 12.5mΩ @ Vgs = 10V, Id = 40A
  • Drain Current: Id = 80A @ Vds = 30V, Vgs = 10V
  • Gate Threshold Voltage: Vth = 0.7V @ Id = 250μA
  • Leakage Current: Idss = 10μA @ Vds = 30V, Vgs = 0V

Thermal Resistance

  • Junction-to-Case: Rth(j-c) = 0.85°C/W
  • Junction-to-Ambient: Rth(j-a) = 62.5°C/W

Mechanical Characteristics

  • Package: TO-220
  • Weight: 6.8g
  • Dimensions: 10.28mm x 4.83mm x 15.75mm

Applications

  • Motor control
  • Power supplies
  • High-power switching
  • Industrial control
  • Automotive systems