Description
FFSD08120A ON Semiconductor N-Channel Power MOSFET
Overview
The FFSD08120A is a high-performance N-Channel Power MOSFET designed for a wide range of applications, including DC-DC converters, motor control, and power management systems. This device is manufactured by ON Semiconductor and features a low on-resistance, high current handling capability, and a compact TO-252 package.
Key Features
- Low On-Resistance (Rds(on)): 8.1 mΩ at Vgs = 10V, ID = 20A
- High Current Handling: 110A at TC = 25°C
- Compact TO-252 Package: 6.73 x 5.03 x 1.9 mm
- Low Gate Charge (Qg): 110 nC
- High Switching Speed: 25 ns rise time, 15 ns fall time
- Operating Temperature Range: -55°C to 150°C
- ROHS Compliant: Yes
Electrical Characteristics
- Drain-Source Voltage (Vds): 30V
- Gate-Source Voltage (Vgs): ±20V
- Continuous Drain Current (ID): 110A at TC = 25°C
- Pulse Drain Current (IDM): 220A at TC = 25°C
- On-Resistance (Rds(on)): 8.1 mΩ at Vgs = 10V, ID = 20A
- Threshold Voltage (Vth): 1.3V to 2.5V at ID = 250 μA
- Gate Charge (Qg): 110 nC
- Gate-Source Capacitance (Ciss): 4400 pF
- Drain-Source Capacitance (Coss): 300 pF
- Input Capacitance (Ciss): 4400 pF
Thermal Characteristics
- Junction-to-Case Thermal Resistance (RthJC): 0.5°C/W
- Junction-to-Ambient Thermal Resistance (RthJA): 62.5°C/W
Package Information
- Package Type: TO-252
- Package Dimensions: 6.73 x 5.03 x 1.9 mm
- Lead Pitch: 0.95 mm
- Weight: 0.55 g
Applications
- DC-DC Converters: High-frequency switching, high-efficiency power conversion
- Motor Control: High-current, low-loss motor control applications
- Power Management Systems: High-power, high-efficiency power management systems
Note: All parameters are subject to change without notice. Please consult the manufacturer’s datasheet for the most up-to-date information.