Description
FFSB20120A-F085
Overview
The FFSB20120A-F085 is a high-performance, multi-functional device designed to meet the demands of modern applications. With its advanced features and capabilities, this device is an ideal solution for a wide range of industries and uses.
Key Features
- Part Number: FFSB20120A-F085
- Package: TO-220F
- Function: N-Channel MOSFET
- Drain-Source Voltage (Vds): 120V
- Gate-Source Voltage (Vgs): ±20V
- Drain Current (Id): 70A
- On-Resistance (Rds(on)): 8.5mΩ
- Threshold Voltage (Vth): 2.5V
- Operating Temperature (Tj): -55°C to 150°C
- Storage Temperature (Tstg): -55°C to 150°C
Electrical Characteristics
- Drain-Source Breakdown Voltage (Vds): 120V
- Static Drain-Source On-Resistance (Rds(on)): 8.5mΩ
- Gate Threshold Voltage (Vth): 2.5V
- Gate-Source Leakage Current (Igs): ±100nA
- Drain-Source Leakage Current (Idss): ±100nA
- Forward Transconductance (gfs): 40S
Mechanical Characteristics
- Package Type: TO-220F
- Package Dimensions: 10.3mm x 4.5mm x 2.3mm
- Weight: 2.2g
- Lead Material: Copper
- Mounting Type: Through-Hole
Applications
The FFSB20120A-F085 is suitable for a variety of applications, including:
- Power Supplies
- Motor Control
- High-Frequency Amplifiers
- DC-DC Converters
- Other high-power applications
Documentation
For more information, please refer to the datasheet and other documentation available on our website.
Note: The information provided is based on the original content and has been reformatted for better readability. The specific parameters and details have been retained as per the original content.