Description
FDS86540-ON
High-Performance N-Channel MOSFET
The FDS86540-ON is a high-performance N-Channel MOSFET designed for high-frequency switching applications. This device features a low on-resistance and high switching speeds, making it ideal for use in a variety of applications, including:
- DC-DC converters
- Motor control
- Power management
- Audio amplifiers
Key Features
- Low On-Resistance: 12.5 mΩ (typ) at VGS = 10V
- High Drain Current: 60A (cont) at TC = 25°C
- High Switching Speeds: 15ns (typ) turn-on, 20ns (typ) turn-off
- Low Gate Charge: 21nC (typ) at VGS = 10V
- High Voltage Rating: 40V (DC)
Electrical Characteristics
| Parameter | Symbol | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | – | – | 40 | V |
| Gate-Source Voltage | VGS | – | – | 20 | V |
| Drain Current | ID | – | 60 | – | A |
| On-Resistance | RDS(ON) | – | 12.5 | – | mΩ |
| Gate Charge | QG | – | 21 | – | nC |
| Turn-On Time | ton | – | 15 | – | ns |
| Turn-Off Time | toff | – | 20 | – | ns |
Package and Pinout
- Package: TO-252 (D2PAK)
- Pinout:
- Gate: 1
- Drain: 2
- Source: 3
Thermal Characteristics
- Junction-to-Case Thermal Resistance: 0.5°C/W (typ)
- Junction-to-Ambient Thermal Resistance: 62.5°C/W (typ)
Absolute Maximum Ratings
- Operating Junction Temperature: -55 to 150°C
- Storage Temperature: -55 to 150°C
Note: All parameters are subject to change without notice. Please consult the manufacturer’s datasheet for the most up-to-date information.