Description

FDS86106 ON Semiconductor Product Information

Overview
The FDS86106 is a high-performance, N-channel, power MOSFET designed for use in a wide range of applications. It offers low on-resistance, high current capability, and a robust design.

Features

N-channel, power MOSFET
Low on-resistance: 6.5 mΩ (typical)
High current capability: 100 A (continuous), 200 A (pulsed)
High voltage rating: 30 V
Low gate charge: 100 nC (typical)
Robust design with high avalanche energy capability

Applications

DC-DC converters
Power supplies
Motor control
Load switching
High-current, high-frequency applications

Parameters

Drain-Source Voltage (Vds): 30 V
Gate-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 100 A
Pulsed Drain Current (Id): 200 A
On-Resistance (Rds(on)): 6.5 mΩ (typical)
Gate Charge (Qg): 100 nC (typical)
Avalanche Energy (Eas): 1000 mJ (typical)
Operating Junction Temperature (Tj): -55°C to 150°C
Storage Temperature (Ts): -55°C to 150°C

Package and Pinout

TO-252 (D2PAK)
3-pin package with drain, gate, and source connections

Ordering Information

FDS86106: TO-252 (D2PAK) package
Available in tape and reel or tube packaging

Documentation and Resources

Datasheet: FDS86106
Application notes: available upon request
Reliability report: available upon request

Note: The specifications and parameters listed above are subject to change without notice. Please consult the manufacturer’s datasheet for the most up-to-date information.