FDD86250 ON

FDD86250  ON
FDD86250  ON
FDD86250  ON
FDD86250  ON

FDD86250 ON

Available
FDD86250  ON 
Features
Shielded Gate MOSFET Technology
Max rDs(on)= 22 mo at Vcs = 10 V, lp= 8AMax 「os(on)= 31 m at Vcs = 6 V, lp=6.5A100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET isproduced _ usingFairchildSemiconductorsadvanced PowerTrenchprocess thatincorporates Shielded Gate technology.This process has beenoptimized for the on-state resistance and yet maintain superiorswitching performance.

Tips on getting accurate quotes from suppliers. Please include the following in your inquiry:
1. Personal or business information
2. Provide product request in great detail
3. Inquiry for MOQ, Unit Price, etc




Please make sure your contact information is correct. Your message will be sent directly to the recipient(s) and will not be publicly displayed. We will never distribute or sell your personal information to third parties without your express permission.