Description

FDD5N50NZTM ON Semiconductor N-Channel MOSFET

Overview

The FDD5N50NZTM is a high-performance N-Channel MOSFET from ON Semiconductor, designed for high-power applications. This device features a low on-resistance, high current handling, and a robust design, making it an ideal choice for a wide range of applications.

Key Parameters

• Drain-Source Voltage (Vds): 500 V
• Gate-Source Voltage (Vgs): ±30 V
• Drain Current (Id): 5 A
• On-Resistance (Rds(on)): 1.2 Ω
• Threshold Voltage (Vth): 2.5 V
• Gate Charge (Qg): 13 nC
• Power Dissipation (Pd): 80 W
• Junction Temperature (Tj): -55°C to 150°C
• Storage Temperature (Tstg): -55°C to 150°C

Package and Pinout

• Package Type: TO-252
• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source

Features and Benefits

• High current handling and low on-resistance
• Robust design with high junction temperature rating
• Suitable for high-power applications such as switching power supplies, motor control, and battery management
• Low gate charge and high gate-source voltage rating for reliable operation
• Available in a TO-252 package for easy mounting and handling

Applications

• Switching power supplies
• Motor control
• Battery management
• High-power amplifiers
• Industrial control systems

Technical Specifications

• Absolute Maximum Ratings:
  • Drain-Source Voltage (Vds): 500 V
  • Gate-Source Voltage (Vgs): ±30 V
  • Drain Current (Id): 5 A
  • Power Dissipation (Pd): 80 W
• Electrical Characteristics:
  • On-Resistance (Rds(on)): 1.2 Ω
  • Threshold Voltage (Vth): 2.5 V
  • Gate Charge (Qg): 13 nC
• Thermal Characteristics:
  • Junction Temperature (Tj): -55°C to 150°C
  • Storage Temperature (Tstg): -55°C to 150°C

Documentation and Support

For more information, please refer to the datasheet and other supporting documentation available on the manufacturer’s website.