Description

FDB38N30U ON Semiconductor N-Channel Power MOSFET

Key Parameters:

• N-Channel
• 30V Drain-Source Voltage
• 38A Continuous Drain Current
• 0.047 Ohms On-Resistance
• 150nC Gate Charge
• TO-220AB Package

Features:

• Low On-Resistance
• High Speed Switching
• Low Gate Charge
• High Continuous Drain Current
• Avalanche Rugged

Description:

The FDB38N30U is a N-Channel Power MOSFET designed for high speed switching applications. It features low on-resistance, high continuous drain current, and low gate charge. This MOSFET is available in the TO-220AB package and is suitable for a wide range of applications, including DC-DC converters, motor control, and power supplies.

Applications:

• DC-DC Converters
• Motor Control
• Power Supplies
• Switch Mode Power Supplies
• Uninterruptible Power Supplies

Pin Configuration:

• Gate: 1
• Drain: 2
• Source: 3

Absolute Maximum Ratings:

• Drain-Source Voltage (Vds): 30V
• Gate-Source Voltage (Vgs): 20V
• Continuous Drain Current (Id): 38A
• Pulsed Drain Current (Idm): 114A
• Power Dissipation (Pd): 150W
• Junction Temperature (Tj): 150°C
• Storage Temperature (Tstg): -55°C to 150°C

Thermal Characteristics:

• Junction-to-Case Thermal Resistance (Rthjc): 1.08°C/W
• Junction-to-Ambient Thermal Resistance (Rthja): 62.5°C/W

Electrical Characteristics:

• On-Resistance (Rds(on)): 0.047 Ohms
• Gate Charge (Qg): 150nC
• Gate-Source Threshold Voltage (Vth): 1.5V
• Drain-Source Leakage Current (Is): 10uA
• Forward Transconductance (Gfs): 12S

Package Dimensions:

TO-220AB

• Overall Package Length: 9.9mm
• Overall Package Width: 8.2mm
• Overall Package Height: 4.5mm
• Lead Thickness: 0.5mm
• Lead Width: 1.1mm

Weight:

Approximately 2.1 grams

Ordering Information:

FDB38N30U – N-Channel Power MOSFET, 30V, 38A, TO-220AB package.