Description
FCPF400N80Z ON Semiconductor IGBT
Overview
The FCPF400N80Z is a high-power Insulated Gate Bipolar Transistor (IGBT) designed for use in a wide range of applications, including power supplies, motor control, and renewable energy systems.
Key Features
- High Current Rating: 400 A
- High Voltage Rating: 800 V
- Low Saturation Voltage: 1.7 V
- High Switching Frequency: 20 kHz
- Short Circuit Withstand Time: 10 μs
- Gate-Emitter Threshold Voltage: 4.5 V
- Collector-Emitter Breakdown Voltage: 800 V
Electrical Characteristics
- Collector-Emitter Saturation Voltage: 1.7 V
- Gate-Emitter Leakage Current: 100 nA
- Collector-Emitter Leakage Current: 100 μA
- Input Capacitance: 12 pF
- Output Capacitance: 10 pF
- Reverse Transfer Capacitance: 3 pF
Thermal Characteristics
- Junction-to-Case Thermal Resistance: 0.15 °C/W
- Case-to-Sink Thermal Resistance: 0.02 °C/W
- Junction Temperature: -40 to 150 °C
Package and Pinout
- Package Type: TO-247
- Pin 1: Gate
- Pin 2: Collector
- Pin 3: Emitter
Applications
- Power Supplies: High-power DC-DC converters, AC-DC converters
- Motor Control: High-power motor drives, servo motors
- Renewable Energy Systems: Solar inverters, wind power converters
- Industrial Power Systems: High-power industrial control systems, power factor correction systems
Documentation
- Datasheet: Available upon request
- Application Notes: Available upon request
Note: All parameters are subject to change without notice. Please verify the specifications with the manufacturer before using the device.