Description
FCPF250N65S3R0L ON Semiconductor IGBT
Overview
The FCPF250N65S3R0L is a high-performance Insulated Gate Bipolar Transistor (IGBT) from ON Semiconductor, designed for high-power applications. This device features a low saturation voltage, high switching frequency, and excellent thermal performance, making it ideal for use in a wide range of applications, including motor control, power supplies, and renewable energy systems.
Key Features
- Collector-Emitter Voltage (Vce): 650 V
- Collector Current (Ic): 250 A
- Gate-Emitter Voltage (Vge): ±20 V
- Saturation Voltage (Vce(sat)): 1.8 V (typical)
- Switching Frequency: Up to 20 kHz
- Thermal Resistance (Rth(j-c)): 0.06 °C/W (typical)
- Package: TO-247
Electrical Characteristics
- Collector-Emitter Breakdown Voltage (V(BR)Ceo): 650 V
- Gate-Emitter Threshold Voltage (Vge(th)): 4.5 V (typical)
- Collector Current (Ic) at Vge = 15 V, Tc = 25 °C: 250 A
- Saturation Voltage (Vce(sat)) at Ic = 250 A, Vge = 15 V, Tc = 25 °C: 1.8 V (typical)
Thermal Characteristics
- Thermal Resistance (Rth(j-c)): 0.06 °C/W (typical)
- Thermal Resistance (Rth(j-a)): 62.5 °C/W (typical)
- Operating Temperature (Tj): -40 °C to 150 °C
- Storage Temperature (Tstg): -40 °C to 150 °C
Package and Pinout
- Package: TO-247
- Pin 1: Collector
- Pin 2: Gate
- Pin 3: Emitter
Applications
- Motor Control: The FCPF250N65S3R0L is suitable for use in high-power motor control applications, including AC and DC motor drives.
- Power Supplies: This device can be used in high-power power supplies, including switch-mode power supplies and resonant converters.
- Renewable Energy Systems: The FCPF250N65S3R0L is suitable for use in renewable energy systems, including solar and wind power inverters.