Description
FCP165N60E ON Semiconductor IGBT
Overview
The FCP165N60E is a high-performance Insulated Gate Bipolar Transistor (IGBT) from ON Semiconductor, designed for high-frequency switching applications. This device offers a unique combination of low conduction losses and fast switching speeds, making it an ideal choice for a wide range of applications, including:
- Power supplies
- Motor drives
- UPS systems
- Solar inverters
- Welding equipment
Key Features
- High Current Rating: 165 A
- High Voltage Rating: 600 V
- Low Vce(sat): 1.8 V
- High Switching Frequency: up to 20 kHz
- Short Circuit Rating: 10 μs
- Gate Charge (Qg): 120 nC
- ESD Rating: 2 kV HBM, 1 kV CDM
- Thermal Resistance (Rth(j-c)): 0.45 °C/W
- Package: TO-247
Electrical Characteristics
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | Vce | – | – | 600 | V |
| Gate-Emitter Voltage | Vge | – | – | 20 | V |
| Collector Current | Ic | – | – | 165 | A |
| Continuous Collector Current | Ic | – | – | 82 | A |
| Pulsed Collector Current | Ic | – | – | 330 | A |
| Power Dissipation | Pd | – | – | 250 | W |
| Junction Temperature | Tj | -40 | – | 150 | °C |
| Storage Temperature | Tstg | -40 | – | 150 | °C |
Mechanical Characteristics
- Package Type: TO-247
- Weight: 10 g
- Dimensions: 16.59 x 5.31 x 2.17 mm
Thermal Characteristics
- Thermal Resistance (Rth(j-c)): 0.45 °C/W
- Thermal Resistance (Rth(j-a)): 62.5 °C/W
Applications
The FCP165N60E is suitable for a wide range of high-frequency switching applications, including:
- Power supplies
- Motor drives
- UPS systems
- Solar inverters
- Welding equipment
Ordering Information
- Part Number: FCP165N60E
- Package: TO-247
- Quantity: please contact us for pricing and availability
Note: The information provided is subject to change without notice. Please verify with ON Semiconductor for the most up-to-date information.