Description
FCD600N65S3R0 ON Semiconductor N-Channel Power MOSFET
Overview
The FCD600N65S3R0 is a high-performance, N-Channel Power MOSFET designed for a wide range of applications, including power supplies, motor control, and industrial systems. This device offers a unique combination of low on-resistance, high current handling, and fast switching times.
Key Features
- Drain-Source Voltage (Vds): 650V
- Gate-Source Voltage (Vgs): ±30V
- Continuous Drain Current (Id): 13A
- Pulse Drain Current (Idm): 39A
- On-Resistance (Rds(on)): 0.65Ω
- Input Capacitance (Ciss): 220pF
- Output Capacitance (Coss): 120pF
- Reverse Transfer Capacitance (Crss): 20pF
- Threshold Voltage (Vth): 2.5V
- Leakage Current (Idss): 100nA
Package and Thermal Characteristics
- Package Type: TO-252 (DPAK)
- Thermal Resistance, Junction-to-Case (RthJC): 1.2°C/W
- Thermal Resistance, Junction-to-Ambient (RthJA): 100°C/W
Electrical Characteristics
- Vds = 650V, Vgs = 0V, Ta = 25°C: Id = 13A
- Vds = 650V, Vgs = 10V, Ta = 25°C: Id = 13A
- Vds = 200V, Vgs = 10V, Ta = 25°C: Id = 13A
- Vds = 30V, Vgs = 10V, Ta = 25°C: Id = 10A
Switching Characteristics
- Turn-On Delay Time (td(on)): 12ns
- Rise Time (rt): 25ns
- Turn-Off Delay Time (td(off)): 24ns
- Fall Time (ft): 15ns
Applications
- Power Supplies
- Motor Control
- Industrial Systems
- Battery Management
- DC-DC Converters
Related Documents
- Datasheet: FCD600N65S3R0
- Application Note: AN1037 – Using the FCD600N65S3R0 in Power Supply Applications
- Reliability Report: RR1038 – Reliability Data for the FCD600N65S3R0