CY15B064Q-SXE Infineon
Available
CY15B064Q-SXE Infineon
Features
■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8
❐ High-endurance 10 trillion (1013) read/writes
❐ 121-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process ■ Very fast serial peripheral interface (SPI)
❐ Up to 16 MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array ■ Low power consumption
❐ 300
A active current at 1 MHz
❐ 6 A (typ) standby current at +85
C
■ Low-voltage operation: VDD = 3.0 V to 3.6 V
■ Automotive-E temperature: –40
C to +125 C
■ 8-pin small outline integrated circuit (SOIC) package
■ AEC Q100 Grade 1 compliant
■ Restriction of hazardous substances (RoHS) compliant
Features
■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8
❐ High-endurance 10 trillion (1013) read/writes
❐ 121-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process ■ Very fast serial peripheral interface (SPI)
❐ Up to 16 MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array ■ Low power consumption
❐ 300
A active current at 1 MHz
❐ 6 A (typ) standby current at +85
C
■ Low-voltage operation: VDD = 3.0 V to 3.6 V
■ Automotive-E temperature: –40
C to +125 C
■ 8-pin small outline integrated circuit (SOIC) package
■ AEC Q100 Grade 1 compliant
■ Restriction of hazardous substances (RoHS) compliant
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