Description

BUK761R7-40E Product Overview

The BUK761R7-40E is a high-performance power MOSFET designed for a wide range of applications, including switch mode power supplies, motor control, and high-frequency switching. This device is part of a family of N-channel enhancement mode field-effect transistors, featuring low on-resistance and high current handling capabilities.

Key Features

• Low On-Resistance (Rds(on)): The BUK761R7-40E boasts an extremely low on-resistance, making it highly efficient in switching applications, minimizing power losses, and maximizing overall system performance.
• High Current Capability: With its robust design, this MOSFET can handle high currents, making it suitable for applications where high power levels are required.
• High Switching Speed: The device is optimized for high-frequency operation, allowing it to be used in applications requiring fast switching action, such as switch mode power supplies.
• Avalanche Ruggedness: Designed to withstand avalanche conditions, the BUK761R7-40E can safely absorb high energy pulses in applications where this capability is critical.
• High Thermal Stability: The MOSFET is built to maintain its electrical characteristics over a wide range of temperatures, ensuring reliable operation in various environmental conditions.

Applications

• Switch Mode Power Supplies (SMPS): Ideal for use in the primary and secondary sides of SMPS due to its low on-resistance and high current handling capability.
• Motor Control: Suitable for motor drive applications requiring high current and high switching speed.
• High-Frequency Switching: Can be used in applications that require the device to switch on and off rapidly, such as in radio frequency (RF) amplifiers and high-speed switching circuits.
• Power Conversion Systems: Useful in DC-DC converters, inverters, and other power conversion systems where high efficiency and reliability are crucial.

Electrical Characteristics

• Drain-Source Voltage (Vds): 40 V
• Gate-Source Voltage (Vgs): ±20 V
• Continuous Drain Current (Id): 60 A
• Pulsed Drain Current (Idp): 240 A
• On-Resistance (Rds(on)): 7.4 mΩ (typical at Vgs = 10 V, Id = 20 A)
• Threshold Voltage (Vth): 1.4 V (typical)
• Input Capacitance (Ciss): 1350 pF (typical)
• Output Capacitance (Coss): 240 pF (typical)
• Reverse Transfer Capacitance (Crss): 18 pF (typical)

Packaging

The BUK761R7-40E is available in a TO-263 (D2PAK) package, which offers excellent thermal performance and is suitable for surface mount assembly, allowing for a compact design and efficient heat dissipation.

Thermal Characteristics

• Junction-to-Case Thermal Resistance (Rth(j-c)): 0.5 K/W
• Junction-to-Ambient Thermal Resistance (Rth(j-a)): 62.5 K/W (minimal footprint)

Reliability and Quality

This MOSFET is manufactured with high-quality materials and processes, ensuring long-term reliability and stability. The device undergoes rigorous testing to meet or exceed international standards for power MOSFETs, guaranteeing performance and durability.

For detailed specifications, application notes, or to inquire about obtaining the BUK761R7-40E, please contact the manufacturer or an authorized distributor. Always refer to the most recent datasheet for the latest information and specifications.